Dual N-channel MOSFET featuring 30V drain-source breakdown voltage and 19mΩ maximum drain-source on-resistance. This surface mount component offers a continuous drain current of 5.5A and a peak current rating of 8.5A. With a 1.233nF input capacitance and fast switching times (11ns fall time, 25ns turn-off delay), it is suitable for power management applications. The SOIC package is RoHS compliant and lead-free, operating across a temperature range of -55°C to 150°C.
PackageSOIC
Current Rating5.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6984S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 19MR |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.233nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6984S Datasheet
Download the complete datasheet for Onsemi FDS6984S to view detailed technical specifications.
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