Dual N-Channel Power MOSFET, 30V Vds, featuring low Rds(on) of 20mR at 10V. This surface-mount SOIC package component offers a continuous drain current of 7.9A and a maximum power dissipation of 2W. Designed with PowerTrench® and SyncFET™ technology, it boasts a 1.7V threshold voltage and fast switching characteristics with a 3ns fall time. RoHS compliant and operating from -55°C to 150°C, it is supplied in a 2500-piece tape and reel.
PackageSOIC
Current Rating7.9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6986AS technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.9A |
| Current Rating | 7.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 29MR |
| Fall Time | 3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 720pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 24ns |
| DC Rated Voltage | 30V |
| Weight | 0.187g |
| Width | 3.99mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6986AS Datasheet
Download the complete datasheet for Onsemi FDS6986AS to view detailed technical specifications.
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