The FDS6990S is a N-channel MOSFET with a continuous drain current of 7.5A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 17mR and a power dissipation of 2W. The device is packaged in tape and reel and is compliant with RoHS and SVHC regulations. It operates within a temperature range of -55°C to 150°C.
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS6990S technical specifications.
General
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6990S Datasheet
Download the complete datasheet for Onsemi FDS6990S to view detailed technical specifications.
No datasheet is available for this part.