N and P-Channel MOSFET, designed for power applications. Features a 30V Drain to Source Breakdown Voltage and 80mΩ Drain to Source Resistance at a nominal Vgs of 1.7V. Continuous drain current is rated at 3.4A, with a current rating of 4.1A. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2W. Packaged in SOIC for surface mounting, with a fall time of 2ns and turn-off delay of 11ns.
PackageSOIC
Current Rating4.1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS8333C technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | 4.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 2ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 282pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 4.5ns |
| Weight | 0.2304g |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS8333C Datasheet
Download the complete datasheet for Onsemi FDS8333C to view detailed technical specifications.
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