Single P-Channel MOSFET, surface mountable in a SOIC package. Features a continuous drain current of 5A and a drain-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 47mΩ at a gate-source voltage of 8V. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant with a fall time of 90ns and turn-on delay time of 8ns.
PackageSOIC
Current Rating-5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS8433A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5A |
| Current Rating | -5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 47MR |
| Element Configuration | Single |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 1.13nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 47mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 260ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -20V |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8433A Datasheet
Download the complete datasheet for Onsemi FDS8433A to view detailed technical specifications.
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