N-Channel MOSFET, single element configuration, featuring 40V drain-to-source breakdown voltage and 7.6A continuous drain current. Offers a low 29mΩ drain-to-source resistance at a 10V gate-to-source voltage. This surface mount component, packaged in SOIC, operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Includes fast switching characteristics with a 9ns turn-on delay and 3ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS8449-F085 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.6A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
21mR
Drain to Source Voltage (Vdss)
40V
Element Configuration
Single
Fall Time
3ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
760pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
29mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, PowerTrench®
Turn-Off Delay Time
23ns
Turn-On Delay Time
9ns
Weight
0.2304g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS8449-F085 Datasheet
Download the complete datasheet for Onsemi FDS8449-F085 to view detailed technical specifications.
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