
N-Channel MOSFET, single element configuration, featuring 40V drain-to-source breakdown voltage and 7.6A continuous drain current. Offers a low 29mΩ drain-to-source resistance at a 10V gate-to-source voltage. This surface mount component, packaged in SOIC, operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Includes fast switching characteristics with a 9ns turn-on delay and 3ns fall time.
Onsemi FDS8449-F085 technical specifications.
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