
N-Channel MOSFET, single element configuration, featuring 100V drain-to-source breakdown voltage and 11.2A continuous drain current. Offers a low 9.8mΩ Rds On at 10Vgs, with a 2.7V threshold voltage. This surface mount component operates within a -55°C to 150°C temperature range and has a 5W maximum power dissipation. Packaged in SOIC for tape and reel, it is RoHS compliant.
Onsemi FDS86140 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.58nF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.7V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 9.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.7V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 13.7ns |
| Weight | 0.13g |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS86140 to view detailed technical specifications.
No datasheet is available for this part.