N-Channel Power Trench® MOSFET, single element configuration, offers 100V drain-to-source breakdown voltage and 7A continuous drain current. Features a low 23mΩ drain-to-source resistance at a nominal gate-to-source voltage of 3.1V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. This surface mount component, packaged in SOIC, boasts a 3.2ns fall time and 8.3ns turn-on delay time. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Onsemi FDS86141 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 934pF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Nominal Vgs | 3.1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 3.1V |
| Turn-Off Delay Time | 14.3ns |
| Turn-On Delay Time | 8.3ns |
| Weight | 0.13g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS86141 Datasheet
Download the complete datasheet for Onsemi FDS86141 to view detailed technical specifications.
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