
N-Channel PowerTrench® MOSFET, a single-element junction field-effect transistor, offers a 150V drain-to-source breakdown voltage and a continuous drain current of 7.5A. Featuring a low Rds On of 17.3mΩ at 10V, this surface-mount device is housed in an SOIC package with dimensions of 4mm (length) x 5mm (width) x 1.5mm (height). It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 5W. Key switching characteristics include a turn-on delay time of 14ns and a fall time of 10ns.
Onsemi FDS86240 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 17.3mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.57nF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 19.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.7V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.13g |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS86240 to view detailed technical specifications.
No datasheet is available for this part.
