N-Channel MOSFET featuring 150V drain-to-source breakdown voltage and 4.1A continuous drain current. This single-element device offers a low 67mΩ maximum drain-to-source resistance at a nominal 3.5V gate-to-source voltage. Designed for surface mounting in a SOIC package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Key switching characteristics include a 7.9ns turn-on delay and a 10ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Onsemi FDS86242 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 56.3mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 760pF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Nominal Vgs | 3.5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 67mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 3.5V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.9ns |
| Weight | 0.13g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS86242 Datasheet
Download the complete datasheet for Onsemi FDS86242 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.