FDS86252

N-Channel Power Trench® MOSFET, single element configuration, featuring 150V drain-to-source breakdown voltage and 4.5A continuous drain current. Offers a low 55mΩ drain-to-source resistance at a nominal gate-to-source voltage of 3.4V. This surface mount component, packaged in SOIC, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Includes input capacitance of 955pF and switching times including a 2.9ns fall time.