N-Channel MOSFET, 60V Drain-to-Source Breakdown Voltage, 18A Continuous Drain Current, and 4.5mΩ Max Drain-to-Source Resistance. Features a 3.1V Threshold Voltage, 6.41nF Input Capacitance, and 7.1ns Fall Time. Operates within a temperature range of -55°C to 150°C with 5W Max Power Dissipation. Packaged in SOIC for surface mounting, supplied on a 2500-piece tape and reel. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Onsemi FDS86540 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 7.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 6.41nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 3.1V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 28ns |
| Weight | 0.13g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS86540 Datasheet
Download the complete datasheet for Onsemi FDS86540 to view detailed technical specifications.
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