N-CHANNEL JFET, SOIC package, designed for surface mount applications. Features a 30V Drain to Source Breakdown Voltage and 30V Drain to Source Voltage (Vdss). Offers a low Drain to Source Resistance of 3.3mR and a Max Rds On of 3.7mR. Continuous Drain Current (ID) is 21A, with a Max Power Dissipation of 2.5W. Operates across a temperature range of -55°C to 150°C. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS8670 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Element Configuration
Single
Fall Time
68ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.04nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.4V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Rds On Max
3.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Turn-Off Delay Time
56ns
Weight
0.2304g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS8670 Datasheet
Download the complete datasheet for Onsemi FDS8670 to view detailed technical specifications.
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