N-Channel MOSFET, single element configuration, offering 30V drain-source breakdown voltage and 14A continuous drain current. Features a low 7.6mΩ drain-source on-resistance and 1.6V nominal gate-source voltage. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 2.5W. Packaged in SOIC for surface mounting, this RoHS compliant component is supplied on a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS8690 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.6MR |
| Element Configuration | Single |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.68nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 7.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.13g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8690 Datasheet
Download the complete datasheet for Onsemi FDS8690 to view detailed technical specifications.
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