N-Channel MOSFET, 40V Drain-Source Voltage, 18.6A Continuous Drain Current, and 4.5mΩ Drain-Source Resistance. Features include a 2.5W Power Dissipation, 150°C Max Operating Temperature, and surface mount SOIC package. This single element transistor offers 11ns fall time and 18ns turn-on delay time, with 7.535nF input capacitance. RoHS compliant and available on a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS8840NZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18.6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 7.535nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.13g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8840NZ Datasheet
Download the complete datasheet for Onsemi FDS8840NZ to view detailed technical specifications.
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