N-Channel MOSFET, single element configuration, featuring 40V drain-source breakdown voltage and 14.9A continuous drain current. Offers a low 7mΩ drain-source on-resistance. Designed for surface mount applications in an SOIC package, with a maximum power dissipation of 2.5W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 13ns turn-on delay and 5ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS8842NZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14.9A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 7MR |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 3.845nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.13g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8842NZ Datasheet
Download the complete datasheet for Onsemi FDS8842NZ to view detailed technical specifications.
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