Dual N-Channel and P-Channel MOSFET for surface mount applications. Features 30V drain-source voltage (Vdss) and -60V drain to source breakdown voltage. Offers a maximum continuous drain current of 8.6A and a low on-resistance of 17mΩ. Operates with a gate-source voltage (Vgs) up to 25V and a nominal Vgs of 1.6V. Packaged in SOIC with 2500 units on tape and reel. RoHS compliant with a maximum operating temperature of 150°C.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
Quick Jump:
Technical Specifications
Onsemi FDS8858CZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 17MR |
| Dual Supply Voltage | 30V |
| Fall Time | 16ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 1.205nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 33ns |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8858CZ Datasheet
Download the complete datasheet for Onsemi FDS8858CZ to view detailed technical specifications.
No datasheet is available for this part.
Product Images
