N-Channel PowerTrench® MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 18A. Offers a low drain-source on-resistance of 4.2mΩ at a nominal gate-source voltage of 2.5V. This single-element MOSFET is designed for surface mounting in a SOIC package, with a maximum power dissipation of 2.5W and operating temperatures from -55°C to 150°C. Key switching characteristics include a turn-on delay time of 9ns and a fall time of 21ns.
PackageSOIC
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS8870 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.2MR |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 4.615nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 4.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 30V |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8870 Datasheet
Download the complete datasheet for Onsemi FDS8870 to view detailed technical specifications.
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