N-Channel MOSFET featuring 30V drain-source breakdown voltage and 9A continuous drain current. Offers a low 20mΩ maximum drain-source on-resistance at a nominal 1.7V gate-source voltage. This surface-mount device, packaged in SOIC, operates within a -55°C to 150°C temperature range with a 2.5W maximum power dissipation. Includes fast switching characteristics with a 7ns turn-on delay and 4ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS8882 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20MR |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.13g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8882 Datasheet
Download the complete datasheet for Onsemi FDS8882 to view detailed technical specifications.
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