N-Channel MOSFET, single element, featuring 30V drain-source breakdown voltage and 8.5A continuous drain current. This surface-mount component offers a low 23mΩ drain-source resistance (Rds On Max) and a 1.7V threshold voltage. Designed with PowerTrench® technology, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 2.5W. Packaged in SOIC, it is RoHS compliant.
PackageSOIC
Current Rating8.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS8884 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.5A |
| Current Rating | 8.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 635pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 30V |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8884 Datasheet
Download the complete datasheet for Onsemi FDS8884 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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