Dual N-Channel MOSFET featuring 100V drain-source breakdown voltage and 3.5A continuous drain current. Offers a low 62mΩ drain-source on-resistance. This surface mount SOIC package component operates from -55°C to 150°C with a maximum power dissipation of 31W. Includes 2 N-Channel FETs with a 3.1V threshold voltage and fast switching times, including a 5ns turn-on delay. Packaged in a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power31W
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Technical Specifications
Onsemi FDS89141 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 62MR |
| Element Configuration | Dual |
| Fall Time | 2.2ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 398pF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 3.1V |
| Turn-Off Delay Time | 9.8ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.187g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS89141 Datasheet
Download the complete datasheet for Onsemi FDS89141 to view detailed technical specifications.
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