Dual N-Channel MOSFET, 100V Drain to Source Breakdown Voltage, 2.7A Continuous Drain Current, and 105mΩ Drain to Source Resistance. Features include a 3V Threshold Voltage, 210pF Input Capacitance, and 1.9ns Fall Time. This surface mount component operates within a temperature range of -55°C to 150°C and offers 31W Max Power Dissipation. Packaged in SOIC on a 2500-REEL tape and reel, it is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Onsemi FDS89161 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Dual |
| Fall Time | 1.9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 210pF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 4.2ns |
| Weight | 0.187g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS89161 Datasheet
Download the complete datasheet for Onsemi FDS89161 to view detailed technical specifications.
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