Dual N-Channel and P-Channel MOSFET transistor for surface mount applications. Features a 20V drain-source breakdown voltage and 4A continuous drain current. Offers a low drain-source on-resistance of 30mR at 10V. Operates across a wide temperature range of -55°C to 150°C. Packaged in a SOIC case with 2500 units per tape and reel.
PackageSOIC
Current Rating5.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS8928A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 43mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30MR |
| Fall Time | 90ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 670mV |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 670mV |
| Turn-Off Delay Time | 260ns |
| Weight | 0.2304g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8928A Datasheet
Download the complete datasheet for Onsemi FDS8928A to view detailed technical specifications.
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