FDS8934A

P-CH MOSFET, Dual, 20V, 4A, 55mR, SOIC, Surface Mount

Dual P-Channel Power MOSFET in SOIC package, featuring a 20V Drain-Source Voltage (Vdss) and 4A continuous drain current (ID). Offers a low 55mR Drain-to-Source Resistance (Rds On Max) and a maximum power dissipation of 900mW. Designed for surface mount applications with a compact 5mm length, 4mm width, and 1.5mm height. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including an 8ns turn-on delay and 90ns fall time.

PackageSOIC

Current Rating-4A

MountingSurface Mount

PolarityP-CHANNEL

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Technical Specifications

Onsemi FDS8934A technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	4A
Current Rating	-4A
Drain to Source Breakdown Voltage	-20V
Drain to Source Resistance	55mR
Drain to Source Voltage (Vdss)	20V
Element Configuration	Dual
Fall Time	90ns
Gate to Source Voltage (Vgs)	-8V
Height	1.5mm
Input Capacitance	1.13nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	900mW
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	2W
Rds On Max	55mR
Turn-Off Delay Time	260ns
Turn-On Delay Time	8ns
DC Rated Voltage	-20V
Weight	0.2304g
Width	4mm