Dual P-Channel Power MOSFET in SOIC package, featuring a 20V Drain-Source Voltage (Vdss) and 4A continuous drain current (ID). Offers a low 55mR Drain-to-Source Resistance (Rds On Max) and a maximum power dissipation of 900mW. Designed for surface mount applications with a compact 5mm length, 4mm width, and 1.5mm height. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including an 8ns turn-on delay and 90ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDS8934A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | -4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | -8V |
| Height | 1.5mm |
| Input Capacitance | 1.13nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 55mR |
| Turn-Off Delay Time | 260ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -20V |
| Weight | 0.2304g |
| Width | 4mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDS8934A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
