Dual N-Channel MOSFET, logic level, 40V Vds, 6A continuous drain current, and 29mΩ max Rds(on). Features 1.9V gate threshold voltage, 3ns fall time, and 9ns turn-on delay. This surface-mount SOIC package component offers 2W power dissipation and operates from -55°C to 150°C. Supplied on a 2500-piece tape and reel.
PackageSOIC
Current Rating6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS8949 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 29mR |
| Dual Supply Voltage | 40V |
| Element Configuration | Dual |
| Fall Time | 3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 955pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 40V |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8949 Datasheet
Download the complete datasheet for Onsemi FDS8949 to view detailed technical specifications.
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