Dual N and P-Channel MOSFET, 30V Drain to Source Breakdown Voltage, 4.5A Continuous Drain Current. Features 26mR Max Drain-Source On Resistance and 51mR Drain to Source Resistance. Operates with a 2V Threshold Voltage and 25V Gate to Source Voltage. Surface mount SOIC package, 1.575mm height, 4.9mm length, 3.9mm width, 0.187g weight. RoHS compliant, 150°C max operating temperature.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDS8958B technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
51mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
26MR
Fall Time
6ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
25V
Height
1.575mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
26mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
2V
Turn-Off Delay Time
17ns
Weight
0.187g
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS8958B Datasheet
Download the complete datasheet for Onsemi FDS8958B to view detailed technical specifications.
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