
Dual N and P-Channel MOSFET, 35V breakdown voltage, 7A continuous drain current, and 24mΩ maximum drain-source on-resistance. This surface-mount SOIC package component features a 2W maximum power dissipation, 5ns fall time, and 20ns turn-off delay time. Operating across a -55°C to 150°C temperature range, it is RoHS compliant and supplied in a 2500-piece tape and reel.
Onsemi FDS8960C technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 35V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 35V |
| Drain-source On Resistance-Max | 24MR |
| Dual Supply Voltage | 35V |
| Fall Time | 5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.575mm |
| Input Capacitance | 570pF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 20ns |
| Weight | 0.2304g |
| Width | 3.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS8960C to view detailed technical specifications.
No datasheet is available for this part.
