Dual N-Channel MOSFET, 30V Drain-Source Breakdown Voltage, 7.5A Continuous Drain Current, and 18mΩ Maximum Drain-Source On-Resistance. Features include a 2.5V Threshold Voltage, 1.27nF Input Capacitance, and fast switching times with 7ns Turn-On Delay and 37ns Fall Time. This surface-mount SOIC package component operates from -55°C to 150°C with a 1.6W Maximum Power Dissipation and is supplied on a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDS8978 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18MR |
| Element Configuration | Dual |
| Fall Time | 37ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.27nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8978 Datasheet
Download the complete datasheet for Onsemi FDS8978 to view detailed technical specifications.
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