N-Channel MOSFET, single element configuration, featuring 30V drain-to-source breakdown voltage and 7A continuous drain current. Offers a low 23mΩ drain-to-source resistance at a 10V gate-source voltage. Designed for surface mounting in an SOIC package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Key switching characteristics include a 5ns turn-on delay and a 21ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDS8984-F085 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 21ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 635pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.2304g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS8984-F085 Datasheet
Download the complete datasheet for Onsemi FDS8984-F085 to view detailed technical specifications.
No datasheet is available for this part.