
P-Channel MOSFET, SOIC package, designed for surface mounting. Features a continuous drain current of 3.5A and a drain-to-source breakdown voltage of -20V. Offers low on-resistance with a maximum of 130mΩ at a gate-to-source voltage of 8V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Includes fast switching characteristics with a fall time of 21ns and turn-on delay of 6.5ns. Automotive qualified (AEC-Q101) and RoHS compliant.
Onsemi FDS9431A-F085 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 405pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 6.5ns |
| Weight | 0.2304g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS9431A-F085 to view detailed technical specifications.
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