Dual N-Channel MOSFET featuring 62V drain-source breakdown voltage and 3.3A continuous drain current. This surface-mount component offers a low on-resistance of 110mΩ at a 10V gate-source voltage. Operating across a wide temperature range of -55°C to 150°C, it includes a maximum power dissipation of 2.27W. The SOIC package contains two N-channel FETs, suitable for automotive applications with AEC-Q101 qualification.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.27W
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Technical Specifications
Onsemi FDSS2407 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Breakdown Voltage | 62V |
| Drain to Source Voltage (Vdss) | 62V |
| Element Configuration | Dual |
| Fall Time | 3500ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 300pF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.27W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.27W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Turn-Off Delay Time | 8700ns |
| Turn-On Delay Time | 630ns |
| Weight | 0.2304g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDSS2407 Datasheet
Download the complete datasheet for Onsemi FDSS2407 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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