N-Channel Power MOSFET, 100V Drain to Source Breakdown Voltage, 6.6A Continuous Drain Current, and 28mΩ Drain to Source Resistance. This single-element transistor features a 1.4V threshold voltage and 20V Gate to Source Voltage. Packaged in a SOT-223 surface mount case, it offers a maximum power dissipation of 2.2W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free, it is supplied on a 4000-piece tape and reel.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
Onsemi FDT86102LZ technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
6.6A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
100V
Element Configuration
Single
Fall Time
2.2ns
Gate to Source Voltage (Vgs)
20V
Height
1.7mm
Input Capacitance
1.49nF
Lead Free
Lead Free
Length
3.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.2W
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET™
Threshold Voltage
1.4V
Turn-Off Delay Time
19ns
Turn-On Delay Time
6.6ns
Weight
0.2502g
Width
6.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDT86102LZ Datasheet
Download the complete datasheet for Onsemi FDT86102LZ to view detailed technical specifications.
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