ONSEMI

FDT86102LZ

Datasheet

Onsemi

FDT86102LZ

Name: FDT86102LZ Onsemi
Brand: Onsemi
SKU: FDT86102LZ

N-CH JFET 100V 6.6A 28mR SOT-223 SM

N-Channel Power MOSFET, 100V Drain to Source Breakdown Voltage, 6.6A Continuous Drain Current, and 28mΩ Drain to Source Resistance. This single-element transistor features a 1.4V threshold voltage and 20V Gate to Source Voltage. Packaged in a SOT-223 surface mount case, it offers a maximum power dissipation of 2.2W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free, it is supplied on a 4000-piece tape and reel.

PackageSOT-223

MountingSurface Mount

PolarityN-CHANNEL

Power2.2W

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Technical Specifications

Onsemi FDT86102LZ technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	6.6A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	28mR
Drain to Source Voltage (Vdss)	100V
Element Configuration	Single
Fall Time	2.2ns
Gate to Source Voltage (Vgs)	20V
Height	1.7mm
Input Capacitance	1.49nF
Lead Free	Lead Free
Length	3.7mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.2W
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.2W
Radiation Hardening	No
Rds On Max	28mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET™
Threshold Voltage	1.4V
Turn-Off Delay Time	19ns
Turn-On Delay Time	6.6ns
Weight	0.2502g
Width	6.7mm