N-Channel PowerTrench® MOSFET, single element configuration, offers 100V drain-to-source breakdown voltage and 3.3A continuous drain current. Features 100mΩ drain-to-source resistance at a 10V gate-to-source voltage. This surface mount component, packaged in SOT-223, operates from -55°C to 150°C with a maximum power dissipation of 2.2W. Includes 315pF input capacitance and 1.5ns fall time.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
Quick Jump:
Technical Specifications
Onsemi FDT86113LZ technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
3.3A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
100V
Element Configuration
Single
Fall Time
1.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.7mm
Input Capacitance
315pF
Lead Free
Lead Free
Length
3.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.2W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.7V
Turn-Off Delay Time
10ns
Turn-On Delay Time
3.8ns
Weight
0.2502g
Width
6.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDT86113LZ Datasheet
Download the complete datasheet for Onsemi FDT86113LZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
