
N-Channel PowerTrench® MOSFET, single element configuration, offers 100V drain-to-source breakdown voltage and 3.3A continuous drain current. Features 100mΩ drain-to-source resistance at a 10V gate-to-source voltage. This surface mount component, packaged in SOT-223, operates from -55°C to 150°C with a maximum power dissipation of 2.2W. Includes 315pF input capacitance and 1.5ns fall time.
Onsemi FDT86113LZ technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 1.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.7mm |
| Input Capacitance | 315pF |
| Lead Free | Lead Free |
| Length | 3.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 3.8ns |
| Weight | 0.2502g |
| Width | 6.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDT86113LZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
