N-Channel Power Trench® MOSFET, single element configuration, offers 150V drain-to-source breakdown voltage and 2A continuous drain current. Features a low 236mΩ drain-to-source resistance and 2.2W maximum power dissipation. Designed for surface mount applications in a SOT-223 package, this RoHS compliant component boasts fast switching speeds with a 1.2ns fall time. Operating temperature range spans from -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
Onsemi FDT86246 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
236mR
Drain to Source Voltage (Vdss)
150V
Element Configuration
Single
Fall Time
1.2ns
Gate to Source Voltage (Vgs)
20V
Height
1.7mm
Input Capacitance
215pF
Length
3.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Nominal Vgs
3.1V
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.2W
Radiation Hardening
No
Rds On Max
236mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
3.1V
Turn-Off Delay Time
4.6ns
Turn-On Delay Time
7.8ns
Weight
0.2502g
Width
6.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDT86246 Datasheet
Download the complete datasheet for Onsemi FDT86246 to view detailed technical specifications.
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