
N-Channel MOSFET, single element, 150V Drain to Source Breakdown Voltage (Vdss) and 1.2A Continuous Drain Current (ID). Features 845mΩ Max Rds On, 695mΩ Drain to Source Resistance, and 10W Max Power Dissipation. Operates from -55°C to 150°C, with 2.7ns Turn-On Delay and 4.8ns Turn-Off Delay. Packaged in SOT-223 for surface mounting, supplied on a 4000-piece tape and reel.
Onsemi FDT86256 technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 695mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 2.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.7mm |
| Input Capacitance | 73pF |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 845mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 4.8ns |
| Turn-On Delay Time | 2.7ns |
| Weight | 0.188g |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDT86256 to view detailed technical specifications.
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