The FDU6N50TU is a 500V N-Channel MOSFET with a continuous drain current of 6A and a gate to source voltage of 30V. It features a drain to source breakdown voltage of 500V and a drain to source resistance of 900mR. The device is packaged in a TO-251-3 package and is designed for through hole mounting. The FDU6N50TU operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 89W. It is RoHS compliant and part of the UniFET series.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power89W
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Technical Specifications
Onsemi FDU6N50TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 940pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDU6N50TU Datasheet
Download the complete datasheet for Onsemi FDU6N50TU to view detailed technical specifications.
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