N-Channel Power Trench MOSFET featuring 20V drain-source breakdown voltage and 35A continuous drain current. Offers low 6.6mΩ drain-to-source resistance at VGS=10V, 5A. Designed for through-hole mounting in a TO-251-3 package, with a maximum power dissipation of 49.5W and an operating temperature range of -55°C to 175°C. Includes lead-free and RoHS compliance.
PackageTO-251-3
Current Rating35A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDU8580 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 6.6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.445nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 49.5W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 49.5W |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 59ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDU8580 Datasheet
Download the complete datasheet for Onsemi FDU8580 to view detailed technical specifications.
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