N-channel MOSFET with 30V drain-source breakdown voltage and 58A continuous drain current. Features low 10mΩ drain-source on-resistance and 55W maximum power dissipation. Packaged in a TO-251-3 (I-PAK) through-hole mount. Operates from -55°C to 175°C, with a gate-source voltage rating of 20V. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating58A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDU8880 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
58A
Current Rating
58A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
10MR
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.26nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
55W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
55W
Rds On Max
10mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
38ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDU8880 Datasheet
Download the complete datasheet for Onsemi FDU8880 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.