N-channel MOSFET featuring 20V drain-source breakdown voltage and 6A continuous drain current. Surface mountable in an 8-TSSOP package, this component offers 18mΩ drain-to-source resistance at a 4.5V gate-source voltage. Maximum power dissipation is 600mW, with a threshold voltage of 900mV. RoHS compliant and lead-free, it operates from -55°C to 150°C.
PackageTSSOP
Current Rating6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDW2501N technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 26ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDW2501N Datasheet
Download the complete datasheet for Onsemi FDW2501N to view detailed technical specifications.
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