N-channel MOSFET with 20V drain-source breakdown voltage and 7.5A continuous drain current. Features low 19mΩ Rds On at 10V Vgs, 2.152nF input capacitance, and 13ns fall time. Designed for surface mounting in a TSSOP package, operating from -55°C to 150°C with 1.6W power dissipation. This RoHS compliant component offers 800mV threshold voltage and 35ns turn-off delay.
PackageTSSOP
Current Rating7.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDW2507N technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.152nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 19mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDW2507N Datasheet
Download the complete datasheet for Onsemi FDW2507N to view detailed technical specifications.
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