The FDW2508PB is a P-channel MOSFET with a continuous drain current of 6A and a drain to source breakdown voltage of -12V. It features a drain to source resistance of 18mR and a gate to source voltage of 8V. The device is packaged in a TSSOP package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTSSOP
Current Rating-6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDW2508PB technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6A |
| Current Rating | -6A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 106ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 3.775nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 254ns |
| DC Rated Voltage | -12V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDW2508PB Datasheet
Download the complete datasheet for Onsemi FDW2508PB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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