N-channel and P-channel MOSFET with 20V drain-source breakdown voltage. Features 4.4A continuous drain current and 6A current rating. Offers low on-resistance of 35mΩ at 10Vgs. Packaged in an 8-TSSOP surface-mount configuration, this component operates from -55°C to 150°C.
PackageTSSOP
Current Rating6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDW2520C technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
4.4A
Current Rating
6A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
20V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
1.325nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1W
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1V
Turn-Off Delay Time
60ns
Compliance
RoHS
Compliant
Datasheet
Onsemi FDW2520C Datasheet
Download the complete datasheet for Onsemi FDW2520C to view detailed technical specifications.
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