Dual P-Channel MOSFET featuring a -20V drain-source breakdown voltage and a maximum continuous drain current of 830mA. This surface-mount component offers a low drain-source on-resistance of 500mΩ at a gate-source voltage of 8V. Designed with PowerTrench® technology, it operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. The device is supplied in tape and reel packaging, with a package quantity of 3000 units.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power625mW
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Technical Specifications
Onsemi FDY1002PZ technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 830mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 500mR |
| Element Configuration | Dual |
| Fall Time | 2.9ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.6mm |
| Input Capacitance | 135pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 446mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 3.5ns |
| Weight | 0.032g |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDY1002PZ Datasheet
Download the complete datasheet for Onsemi FDY1002PZ to view detailed technical specifications.
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