P-channel JFET with -20V drain-source breakdown voltage and 830mA continuous drain current. Features 500mΩ maximum drain-source on-resistance and a -700mV threshold voltage. This single-element transistor offers fast switching with 2.9ns fall time and 3.5ns turn-on delay. Packaged in a compact SC surface-mount case, it operates from -55°C to 150°C with 625mW maximum power dissipation.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power625mW
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Technical Specifications
Onsemi FDY102PZ technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
830mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
500MR
Element Configuration
Single
Fall Time
2.9ns
Gate to Source Voltage (Vgs)
8V
Height
0.78mm
Input Capacitance
135pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
625mW
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-700mV
Turn-Off Delay Time
23ns
Turn-On Delay Time
3.5ns
Weight
0.03g
Width
0.98mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDY102PZ Datasheet
Download the complete datasheet for Onsemi FDY102PZ to view detailed technical specifications.
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