Dual P-Channel Junction Field-Effect Transistor (JFET) designed for power applications. Features a -20V drain-to-source breakdown voltage and a continuous drain current of 350mA. Offers a low 1.2Ω drain-to-source resistance at a gate-to-source voltage of 8V. This surface-mount device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. Packaged in tape and reel for automated assembly.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power630mW
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Technical Specifications
Onsemi FDY2000PZ technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.6mm |
| Input Capacitance | 100pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 630mW |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.03V |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.032g |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDY2000PZ Datasheet
Download the complete datasheet for Onsemi FDY2000PZ to view detailed technical specifications.
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