N-channel MOSFET transistor, 20V drain-source breakdown voltage, 600mA continuous drain current. Features 300mΩ max Rds On, 60pF input capacitance, and 2.4ns fall time. Surface mountable in a 3-pin SOT-523FL package, operating from -55°C to 150°C. 625mW max power dissipation, RoHS compliant, and lead-free.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power625mW
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Technical Specifications
Onsemi FDY302NZ technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.78mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.03g |
| Width | 0.98mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDY302NZ Datasheet
Download the complete datasheet for Onsemi FDY302NZ to view detailed technical specifications.
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