Complementary N and P-Channel PowerTrench® MOSFET, surface mountable in an SC package. Features a 20V Drain to Source Voltage (Vdss) and 600mA Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance of 700mR and a typical Gate to Source Voltage (Vgs) of 8V. Includes a 60pF input capacitance and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageSC
Current Rating600mA
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDY4000CZ technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
600mA
Current Rating
600mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
700MR
Fall Time
13ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Height
0.5mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
625mW
Radiation Hardening
No
Rds On Max
700mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
600mV
Turn-Off Delay Time
8ns
DC Rated Voltage
600V
Weight
0.032g
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDY4000CZ Datasheet
Download the complete datasheet for Onsemi FDY4000CZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.