N-channel MOSFET transistor with a 20V drain-source breakdown voltage and 9.6A continuous drain current. Features a low 14mΩ drain-source on-resistance and operates with a 12V gate-source voltage. This surface-mount device is housed in an 18-pin BGA package, offering a maximum power dissipation of 2.1W. Ideal for applications requiring efficient switching with fast turn-off delay times of 29ns and fall times of 11ns.
PackageBGA
Current Rating9.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDZ2553N technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | 9.6A |
| Current Rating | 9.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.299nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 14mR |
| RoHS Compliant | No |
| Series | PowerTrench® |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDZ2553N Datasheet
Download the complete datasheet for Onsemi FDZ2553N to view detailed technical specifications.
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