
Surface mount N-channel MOSFET featuring 20V drain-source breakdown voltage and 9.6A continuous drain current. Offers a low 12mΩ drain-source resistance at a 10V gate-source voltage. This component boasts a 2.1W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 10ns turn-on delay and 11ns fall time.
Onsemi FDZ2553NZ technical specifications.
| Package/Case | BGA |
| Continuous Drain Current (ID) | 9.6A |
| Current Rating | 9.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.24nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | No |
| Series | PowerTrench® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 20V |
| RoHS | Not CompliantNo |
Download the complete datasheet for Onsemi FDZ2553NZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
