The FDZ493P is a P-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.7W and a drain to source resistance of 36mR. The device is packaged in a BGA package and is lead free. The FDZ493P has a continuous drain current of 4.6A and a gate to source voltage of 12V. It also features a turn-off delay time of 22ns and a turn-on delay time of 11ns.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
Power1.7W
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Technical Specifications
Onsemi FDZ493P technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 754pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 46mR |
| RoHS Compliant | No |
| Series | PowerTrench® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi FDZ493P Datasheet
Download the complete datasheet for Onsemi FDZ493P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.